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| jmnic product specification silicon pnp darlington power transistors 2SB1255 description ? with to-3pfa package ? optimum for 90w hi-fi output ? high foward current transfer ratio h fe ? low collector-emitter saturation voltage ? complement to type 2sd1895 applications ? power amplification pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -160 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -8 v i c collector current -15 a i cp collector current-peak -12 a t c =25 ?? 100 p c collector power dissipation 3 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon pnp darlington power transistors 2SB1255 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter voltage i c =-30ma ; i b =0 -140 v v cesat collector-emitter saturation voltage i c =-7a ;i b =-7ma -2.5 v v besat base-emitter saturation voltage i c =-7a ;i b =-7ma -3.0 v i cbo collector cut-off current v cb =-160v; i e =0 -100 | a i ceo collector cut-off current v ce =-140v; i b =0 -100 | a i ebo emitter cut-off current v eb =-5v; i c =0 -100 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 2000 h fe -2 dc current gain i c =-7a ; v ce =-5v 5000 30000 f t transition frequency i c =0.5a ; v ce =-10v;f=1mhz 20 mhz switching times t on turn-on time 1.0 | s t stg storage time 1.5 | s t f fall time i c =-7a; v cc =-50v i b1 =-i b2 =-7ma 1.2 | s ? h fe-2 classifications q p 5000-15000 8000-30000 jmnic product specification 3 silicon pnp darlington power transistors 2SB1255 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm) |
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